Technical description
Full equipment name: KDF 844NT
General purpose: Deposition of metals, metal alloys
Technical data:
• Cryo pumped Loadlock
• Cryo pumped process chamber
• 12 KW DC source
• 5 KW RF source
• 4 Target system (Au, TiW, Al, Ni)
• Etching before deposition (Wafer preclean)
• 2 process gases, Argon (main) and Nitrogen (reactive)
• 1 Torr capacitance manometer
• Variable throttle
• Downstream or upstream pressure control
• Preheat of wafers in Loadlock possible
• Scan speed adjustable from 2 to 600 centimetres per minute
• Wafer carrier (palette) allows mounting of arbitrary shaped samples, up to 8 inch wafers