Technical description
Full equipment name: Plasmalab 80Plus (Oxford PECVD System) Chamber A
General purpose: Deposition of dielectric thin films
Technical data:
• Standard processes for deposition of thin films such as Si3N4 and SiO2.
• Installed gases: SiH4 (2% in N2), NH3, N2O, CF4, O2, N2
• Aluminium chuck, approx. 8” diameter.
• Uniformity: +/- 2 % within batch, +/- 3% between batches.
• Chamber vacuum: > 0 mTorr under pumping
• RF frequency: 13.56 MHz, & 10-400 kHz (dual RF source)
• Plasma power range: 0 – 500 W