Technical description
Full equipment name: Oxford Instrument ICP380 Etch System
General purpose: Dry etching of GaAs and InP
Technical data:
• ICP/RF excited plasma
• Gases: SiCl4, Cl2, H2, CH4, SF6, Ar, O2, N2
• Single wafer etch-system with loadlock (maximum 200 mm wafer)
• Configured for 100mm wafers, glue smaller pieces on 100 mm Si wafers
• Achived uniformity: +/- 3 % within 100mm GaAs wafer