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Current status:
AVAILABLE
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Responsibles
1st Responsible:
Magnus Lindberg
2nd Responsible:
Anton Ek
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Description
Oxford Instruments PlasmaPro 100 ICP-CVD
 
The PlasmaPro 100 ICP-CVD is a single-wafer inductively coupled plasma chemical vapor deposition (ICP-CVD) system for deposition of dielectric films. The system accepts wafer sizes from 3" to 8" without electrostatic or mechanical clamping. Carriers are available for smaller samples and non-standard substrate sizes.
 
Standard process gases:
• SiH4
• O2
• Ar
• N2
• SF6
 
The tool is equipped with a transmission disc in the standard configuration to provide improved film uniformity across the wafer.
 
Important notes:
• Do not modify any standard (!S!) recipe parameters except deposition time.
• After completing your process, clean the chamber using the !S! Plasma clean recipe.
• The plasma clean recipe stops automatically via endpoint detection and turns off the substrate heater.
• Using a carrier may affect both film properties and plasma strike conditions. Verify that the selected recipe provides satisfactory results when processing samples in a carrier.
• Contact the tool owner if you have feedback on standard recipes or if you wish to develop and qualify a new process recipe.
 
Details
Tool name:
ICPCVD
Area/room:
C-Q-Etch
Category:
Thin film deposition
Manufacturer:
Oxford Plasma Technology
Model:
PlasmaPro 100
Tool rate:
D
Process info
Recipe: !S! TD_Standard SiO2 v2
 
Use case: All purpose SiO2 film
 
Film properties:
• Deposition rate: 65 nm/min
• Thickness uniformity: 1.5%
• Refractive index (RI): 1.449
• RI uniformity: 0.2%
• Stress: -250 MPa
• BOE etch rate: 129 nm/min
• Step coverage (side/top): 0.5
• Comment: ~0.3 in 2 µm narrow trenches
 
 
Recipe: !S! TD_Carrier_Standard SiO2 v2
 
Use case: All purpose SiO2 film
 
Film properties:
• Deposition rate: 65 nm/min
• Thickness uniformity: 2%
• Refractive index (RI): 1.449
• RI uniformity: 0.2%
• Stress: -400 MPa
• BOE etch rate: 132 nm/min
• Step coverage (side/top): 0.5
• Comment: ~0.3 in 2 µm narrow trenches
 
 
Recipe: !S! TD_Low stress SiN
 
Use case: Low stress SiN film
 
Film properties:
• Deposition rate: 17 nm/min
• Thickness uniformity: 1.5%
• Refractive index (RI): 1.971
• RI uniformity: 0.3%
• Stress: -20 MPa
• BOE etch rate: 12 nm/min
• Step coverage (side/top): 0.6
• Comment: -
 
 
Recipe: !S! TD_Carrier_Low stress SiNx
 
Use case: Low stress SiN film
 
Film properties:
• Deposition rate: 17 nm/min
• Thickness uniformity: 1.4%
• Refractive index (RI): 1.968
• RI uniformity: 0.2%
• Stress: -32 MPa
• BOE etch rate: 19 nm/min
• Step coverage (side/top): Not tested
• Comment: -
 
 
Recipe: !S! TD_Hard SiN
 
Use case: HF etch stop, barrier
 
Film properties:
• Deposition rate: 22 nm/min
• Thickness uniformity: 1.3%
• Refractive index (RI): 1.992
• RI uniformity: 0.3%
• Stress: -1393 MPa
• BOE etch rate: 7 nm/min
• Step coverage (side/top): 0.5
• Comment: -
Instructors & Licensed Users

Instructors

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Tool Modes
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