General

The AS-One RTP-System allows rapid-thermal processing on single wafers. Any substrate (≤ 150 mm) can be processed inside the SiC-coated graphite susceptor. The tool can be re-configured for direct heating of silicon wafers. The tool has two pyrometers, one for low-temperature measurements (100 – 1100 °C, used for regulating temperature of silicon wafers) and one for high temperature measurements (300 – 1300 °C, used for regulating temperature of graphite susceptor). The tool is equipped with a fast-cooling system that allows indirect water cooling below 300 °C. Annealing ambients can be vacuum (~mBar, no pressure control), nitrogen or forming gas (5 % H₂ in N₂).

Max ramp rate is 20 °C/s for susceptor and 40 °C/s for silicon wafers, and maximum annealing time is determined by temperature,

Maximum temperature is 1100 °C and minimum temperature is ~150 °C. It takes ~20 s for the susceptor to reach steady-state temperature with a ramp rate of 10 °C/s.

Total process time for 1 min anneal in susceptor at 1000 °C takes about ~20 min.

Restrictions

Do NOT handle the susceptor with metal tweezers, do NOT let the susceptor come in contact with metals. If you silicide a wafer, then have the metallised surface away from the susceptor (that is, facing up).

The default setup is the use of a graphite susceptor! Anyone can use the graphite susceptor, regardless if they have silicon or SiC or other samples. Special training is required to change the setup.

Only trained operators are allowed to write their own recipes. Special care must be taken for programming the tool to use dangerous gases.

CMOS-compatible metals (nickel, titanium, cobalt, platinum, tungsten, Ti-W, TiN and aluminium) are allowed. Contact tool responsible if the temperature is higher than the melting point of any material present on the wafer. Photoresist and copper are strictly forbidden. Contact tool responsible for the anneal of gold or silver, or any other exotic material.