Oxford Instruments Plasmapro 100 Cobra 300 dry etching system with loadlock

Process gases: O₂, Ar, CF₄, CHF₃, SF₆, C₄F₈, N₂

Configured for 4'' wafers (capable of up to 8'' with reconfiguration)

Wide temperature range electrode -150 -> 400 with He backside pressure

Plasma power: ICP max 3000 W, table RF max 600 W

Process pressure: ~1-250 mTorr

Webmanual:

https://www.nanophys.kth.se/nanolab/rie-Cobra300/cobra300.html