Oxford Instruments Plasmapro 100 Cobra 300 dry etching system with loadlock
Process gases: O2, Ar, CF4, CHF3, SF6, C4F8, N2
Configured for 4'' wafers (capable of up to 8'' with reconfiguration)
Wide temperature range electrode -150 -> 400 with He backside pressure
Plasma power: ICP max 3000 W, table RF max 600 W
Process pressure: ~1-250 mTorr
Webmanual:
https://www.nanophys.kth.se/nanolab/rie-Cobra300/cobra300.html