Capacity:  6x2" wafer (7x2" with center wafer), 1x6”, and 1x4”
Application:  GaN/(Al, Ga, In)N based materials, doping Si (n-type) and Be (p-type)

CCS Flip Top Reactor:

• Dual input plenum showerhead injector
• 3 zone heater, max temp 1400C
• Dynamic reactor height adjustment (Possible to adjust the distance between susceptor and showerhead by recipe during growth.)

Precursor Handling System:

• Standard metalorganic channels (1xTMGa, 1xTEGa, 2xTMAI, 2xTMIn, 1xCp2Mg)
• Spare prep for standard metalorganic channel (1xNN)
• Double source for hydride gas (1xNH3) (1 high flow line and one low flow line with double dilution)
• Double dilution gas channels (1xSiH4 (to hydride line), 1xSiH4 (to MO line)
• Differential run/vent pressure balancing (1x MO run/vent, 1x Hydride run/vent)
• Epison 4 precursor concentration: Total of 6 units control all MO sources except Cp2Mg.

Process Control:

• LayTec EpiCurve TT (In situ measurement of wafer curvature, growth rate/thickness.)
• ARGUS reactor thermal mapping system. (Precise control of temperature homogeneity over the susceptor; 120 measurement points/rotation)