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Current status:
AVAILABLE
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1st Responsible:
2nd Responsible:
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Technical description
1. Full equipment name
ExperTech CTR-200 Compact Thermal Reactor

2. General purpose
LPCVD undopedor doped amorphous silicon or poly silicon

3. Technical data
Gases: N2, SiH4, Si2H6, 1% PH3/H2, 4% B2H6/N2

4. Capabilities:
· LPCVD -Si (undoped amorphous poly silicon)
· LPCVD poly-Si (undoped poly silicon)
· LPCVD IDP (In situ phosphorus- or boron- doped amorphous and poly silicon)

Tool name:
IDP
Area/room:
C-APL
Category:
Thin film deposition
Manufacturer:
Expertech
Model:
LPCVD furnace
Tool rate:
C

Si depositions using SiH4.

Undoped amorphous Si

  • Standard a-Si, undoped amorphous Si (SiH4) at T=560C
    • 2.14±0.07 nm/min, (2024-03-20)

Doped (n-type with PH3) amorphous Si (SiH4) at T=560C

  • n+-poly Si: 1.42±0.06 nm/min (2024-04-15)
    RTA 800C, 60s gives resistivity=2.2 mOhmcm and carrier concentration = 2.2e20 cm-3

Doped (p-type with B2H6) Si (SiH4)

  • p+-poly Si at 560C: 4.8 nm/min (2024-04-17)
    RTA 800C, 60s gives resistivity =2.8 mOhmcm and carrier concentration = 2.8e20 cm-3
  • p+-poly Si at 620C has a dep rate about twice othe dep rate at 560C.

Instructors

Licensed Users

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