Undoped amorphous silicon, STD A-SI, 150 mm wafers, full and closed cage, 5 points, 5 wafers
Updated 2026-08-19
- 2.34±0.05 nm/min (within flat zone, between wafer uniformity), within wafer uniformity <2 %
- 2.0±0.4 nm/min (within cage, between wafer uniformity), within wafer uniformity <=3 %
Phosphorus doped amorphous silicon, STD A-SI N-DOPED, 150 mm wafers, full and closed cage, 5 wafers
RTP activation graphite susceptor, 800 ºC, 60 s, N2
Updated 2026-08-21
- 0.86±0.01 nm/min (within flat zone, between wafer uniformity), within wafer uniformity <3 %
- 2.3±0.1 mOhm cm (within flat zone, between wafer uniformity), sheet resistance within wafer uniformity <=6.5 %
- 0.80±0.09 nm/min (within cage, between wafer uniformity), within wafer uniformity <3 %
- 2.7±0.5 mOhm cm (within cage, between wafer uniformity), sheet resistance within wafer uniformity <=6.5 %
Old processes:
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Undoped amorphous and poly Si, Open boat
- Standard a-Si, undoped amorphous Si (SiH4) at T=560C
- 3.15±0.30 nm/min, (2024-11-18)
- Standard poly-Si (USG), undoped Si (SiH4) at T=620C
- 8.23±0.05 nm/min, (2015-08-09)
-
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Doped (n-type with PH3) amorphous Si (SiH4) at T=560C, Closed caged boat
- n+-poly Si: 1.42±0.06 nm/min (2024-04-15)
RTA 800C, 60s gives resistivity=2.2 mOhmcm and carrier concentration = 2.2e20 cm-3
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Doped (p-type with B2H6) Si (SiH4), Open boat
- p+-poly Si at 560C: 4.8 nm/min +/- 10% (2024-04-17)
RTA 800C, 60s gives resistivity =2.8 mOhmcm and carrier concentration = 2.8e20 cm-3
- p+-poly Si at 620C has a dep rate about twice othe dep rate at 560C.
Cage boat can be used for p-type poly to improve uniformity (<5%) but with lower deposition rate of 2.7 nm/min