Technical description
Full equipment name: LPE PE106
General purpose: Growing epitaxial layers on SiC-wafers
Technical data:
• Hotwall SiC-CVD reaktor with loadlock
• One cell with rotation for three dimension of wafers;
    - 3” 1 wafer
    - 4” 1 wafer
    - 6” 1 wafer
Installed gases:
• House gases:
   - H2, Ar, N2
• System gases:
   - SiH4,10% i H2, 50 L
   - C3H8, 10% i H2, 50 L
   - N2, 100%, 50 L
   - HCl, 100%, 10 L
• MO-chamber: TMAl 100 g
• Thermobath: Glykol i H2O
• Process pressure range: < 1000 mbar
• RF power 60 kW