Maskless photolithography system, from Heidelberg Instruments GmbH model MLA150 with "Write Mode I".  

Min. feature size 500 nm
375nm ~3W diode laser
5 to 150 mm2 substrate size
500 nm overlay accuracy
1000 nm backside alignment accuracy
<35min exposure time for 4'' wafer, writespeed >300 mm2/min (80 mJ/cm2 dose)  

TECHNICAL WEBSITE: 

https://www.nanophys.kth.se/nanolab/mla150/mla150.html