Technical description:
4" PVD
Chamber E degas at 300-400C Chamber C pre-clean Chamber 1 for TiW deposition Chamber 3 for Ni deposition Chamber 4 for Al deposition
Pre clean sputter etch of SiO2 ~ 42 +/- 0.3 nm/min
Deposition on 150 mm Si wafer
TiW Deposition Rate = 205 nm/min, Edge = 202 nm/min, Center = 210 nm/min, Center_fast = 4 %, Stress = 90 MPa Compressive
Al Deposition Rate = 720 nm/min, Edge = 732 nm/min, Center = 675 nm/min, Edge_fast = 8 %, Stress = 170 MPa Tensile
Ni Deposition Rate = 74 nm/min, Edge = 70 nm/min, Center = 80 nm/min, Center_fast = 14 %, Stress = 330 MPa Tensile
The deposition rate variation is systematically radial over the wafer.