Technical description:
4" PVD
Chamber E degas at 300-400C Chamber C pre-clean Chamber 1 for TiW deposition Chamber 3 for Ni deposition Chamber 4 for Al deposition
Pre clean sputter etch of SiO2 ~ 42 +/- 0.3 nm/min
TiW Deposition Rate = 205 nm/min Within Wafer Range 2 nm/min, Stress = 90 MPa Compressive
Al Deposition Rate = 755 nm/min Within Wafer Range 37 nm/min, Stress = 170 MPa Tensile
Ni Deposition rate = 79 nm/min Within Wafer Range 2 nm/min, Stress = 330 MPa Tensile