General purpose: Production of thin films of a wide variety of oxides.UHV PLD Laboratory with integrated High-Pressure RHEED, Continuous Composition spread (CCS),  DC ion gun for ion-assisted PLD and Target-Substrate Load-lock features. The PLD module features a load-lock designed for handling both 4-inch diameter wafers and Omicron sample holder. A vacuum suitcase for transporting the Omicron sample  under UHV conditions is also included.

Some available compositions:

Al₂O₃,   BaBiO₃,  BaTiO₃, (BaSr)TiO₃, Bi₄Ti₃O₁₂, Bi₄Ge₃O₁₂,  CeO₂,  CuO

Er₂O₃  (available also for doping)

CMR manganites:  LCMO, LSMO, LPMO etc. – available even on Si or GaAs substrate

Garnets:  Gd₃Ga₅O₁₂, Y₃Fe₅O₁₂, (Ce-Y)₃Fe₅O₁₂, Bi₃Fe₅O₁₂, La₃Ga₅O₁₂,Nb₃Ga₅O₁₂

               Sm₃Ga₅O₁₂,  Tb₃Ga₅O₁₂, Y₃Al₅O₁₂ etc.

In₂O₃-SnO₂ (ITO),  LaAlO₃,  (LaSr)CoO₃,   MgO,  Nb₂O₅, SrTiO₃, TiO₂, TiN, Ta₂O₅,

Y₂O₃, YBa₂Cu₃O₇ (available on Si), VO₂, ZnO

Multilayers available.

Development  processes for similar material types is available upon request.

Technical data:

Laser - Lambda Physik/ Coherent  COMPExPro 110 Excimer Laser

             - Wavelength:  248 nm

             - Pulse energy:  400 mJ

             - Maximum average power:  30W

             - Maximum repetition rate:  100 Hz

Wafer sizes: 4” max

Base pressure (RT):  4 E-9 Torr

Temperature (max) at a substrate susceptor: 850 ⁰C

Targets: 6 x 1” targets or 3 x 2” targets

Process gas: Oxygen, Nitrogen, Argon MFC controlled

Film uniformity : better than ± 5% across the 4” wafer (with beam scanning and 2” target)

High Pressure RHEED system. Capable of operation at pressures up to 400 mtorr. Includes

a STAIB 30 keV double differentially pumped RHEED gun, 30 keV power supply, fluorescent screen, CCD camera with zoom lens and a Computer with pre-loaded software for recording RHEED images and RHEED intensity oscillations.

Ion gun, 4 cm diameter Kaufmann source for ion-assisted deposition.  The maximum kinetic energy of the ion beam is 1000 eV,   maximum beam current for Argon ions is 60 mA. Process pressure range: 1 to 5 x 10^ -4 Torr.

Continous Composition Spread: Allows for continuous,binary, and ternary compositional spreads across 4-inch diameter substrate - target and Substrate indexing, laser triggering with the desired number of pulses for each target.

Restrictions: Toxic, corrosive, explosive, radioactive and other harmful substances. Usage of materials with high vapour pressure has to be discussed  with manufacturer.