Technical description
PCMux user name: Engineer, password: thermco
Full equipment name: Thermco furnace
General purpose: Forming gas anneal (FGA), 300 - 450 °C
Wafer sizes: 4". 6" and 200 mm
Restrictions
The furnace can be used for processing of silicon and SiC material.
Allowed substrates:
- Semiconductor grade silicon or better.
- Semiconductor grade SiC or better.
- Semiconductor grade quartz or better.
Allowed films:
- Semiconductor grade Si (silicon), SiO2 (silicon dioxide), Si3N4 (silicon nitride), Metal films
NOT ALLOWED: Au (gold) films, organic material
Technical data:
Gases (maxflow): N2 (10 slm), H2 (10 slm)
Gas mixture to 10% Hydrogen in Nitrogen
Tube heating:
3-zone furnace controlled with either spike thermocouples for fast temperature change or profile thermocouples
Thermocouple types: S-type (10 % Rh in Pt/Pt)
Tube maximum allowed temperature: 450 °C
Tube maximum ramp up speed: 10 C/min
Tube maximum ramp down speed: 3 C/min
Tube/boat material: High purity Quartz
Cantilever paddle material: High purity siliconized SiC