Technical description
Full equipment name: BENEQ TFS 200
General purpose:
Atomic Layer Deposition of metals and dielectrics
Technical data:
Process chambers for thermal ALD
4 Liquid source positions
2 Hot source (Tmax=300C) positions
Gases:
N2, NH3, O2, O3
Liquid precursors
- Trimethylaluminum (TMA), Al2(CH3)6
- Titaniumtetrachloride (TiCl4)
- AP-LTO-330 (commercial name for Si precursor by Airproduct)
- Water (H2O)

Hot source pecursors
- Bis(methylcyclopentadienyl)methoxymethylhafnium (HfD04), Hf[C5H4(CH3)]2(OCH3)CH3
- Tris(cyclopentadienyl)thulium(III) (TmCp3)