Technical description

1.Full equipment name

 Suss Microtec CB8

2.General purpose

Wafer bonding for 100 mm, 150 mm and 200 mm substrates. Able to perform anodic, direct and adhesive wafer bonding procedures.

3.Detailed description

Wafer bonding for 100 mm, 150 mm and 200 mm substrates. Able to perform anodic, direct and adhesive wafer bonding procedures.

4.Technical data:

• Wafer and substrate sizes up to 200 mm (8 inches)

• Vacuum down to 5e-6 mbar

• Overpressure up to 3 bar absolute

• Bond force up to 90 kN

• Pressure accuracy:

– From 0.1 to 10 mbar ±1.5%

– From 10 to 1000 mbar ±1.0%

– From 1 to 3 bar ±50 mbar

• Force-Column design with rigid superstructure and stainless steel bellows for atmospheric

isolation

• Dual zone ceramic heater assembly for more uniform heating of wafers during bonding,

10-600 degrees C (temperature uniformity ±1%)

• Programmable center pin

• Automatic Wedge Error Compensation for consistently accurate planarity

5.Capabilities:

• Anodic Bonding (AB)

• Silicon Fusion Bonding (SFB)

• Adhesive Bonding (ADB)

• Thermal Compression Bonding (TCB)

6.Restrictions:

Only authorized personnel are allowed to reconfigure the wafer bonder. This consists of changing wafer bonder chucks and parameters to enable different wafer formats and bonding procedures.

Bonding of dies (i.e placing dies on a carrier wafer that is inserted into the machine) is only allowed after consulting the tool responsible.

Only clean wafers are allowed in the machine to avoid contaminating the bonding chamber.