Technical description
Full equipment name: AIXTRON VP508GFR
General purpose: Growing SiC epitaxial layers on SiC- and Si-wafers
Technical data:
• Hotwall SiC-CVD reaktor
• Two cells;
  - Cell 1 with rotation for three wafer dimensions
    - 2” 3 wafer
    - 3” 1 wafer
    - 4” 1 wafer
  - Cell 2 not used at the moment
Installed gases:
• House gases:
   - H2, Ar, N2
• System gases:
   - SiH4,10% i H2, 20 L
   - SiH4,30% i H2, 20 L
   - C3H8, 10% i H2, 20 L + 50 L
   - N2, 100%, 10 L
   - (HCl, 5% i H2, 20 L)
• MO-chamber: TMAl 100 g
• Thermobath: Glykol i H2O
• Process pressure range: < 1000 mbar
• RF power 40 kW