Technical description
Full equipment name: Plasmalab System 100
General purpose: RIE – Standard processes for Reactive Ion Etching of thin films such as Si3N4 and SiO2
Technical data:
• Installed Gases: NF3, O2, Ar, CF4, CHF3
• Graphite Chucks ~ 8” diameter for processing of 150 mm, 100 mm and 50 mm wafers
• Chamber process pressure: 0-1 Torr
• RF Frequency: 13,56 MHz
• RIE Plasma Power Range: 0 – 500 W
• Loadlock chamber – mechanical pump
• Turbo pumped process chamber