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Technical description
Full equipment name: Plasmalab System 100
General purpose: RIE – Standard processes for Reactive Ion Etching of thin films such as Si3N4 and SiO2
Technical data:
• Installed Gases: NF3, O2, Ar, CF4, CHF3
• Graphite Chucks ~ 8” diameter for processing of 150 mm, 100 mm and 50 mm wafers
• Chamber process pressure: 0-1 Torr
• RF Frequency: 13,56 MHz
• RIE Plasma Power Range: 0 – 500 W
• Loadlock chamber – mechanical pump
• Turbo pumped process chamber

Tool name:
Dry etching
Plasmalab System 100
RIE of thin films (Si3N4 & SiO2)
Tool rate:

Latest calibration runs:


Silicon nitride

Recipe: NITRIDE CF4 ETCH (CF4 100 sccm, O2 10 sccm, 75 mTorr, 45 W)

Etch rate: 11,2 nm/min for P5000 nitride (2022-10-24)


Silicon oxide

Recipe: OXIDE CHF3 ETCH (CHF3 85 sccm, O2 7 sccm, 50 mTorr, 125 W)

Etch rate: 35,3 nm/min for thermal oxide (2022-10-24)


Note: Both of these recipes will etch both oxide and nitride, but they are only calibrated according to the description above. CHF3 will generally produce more polymers.




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