Technical description
Full equipment name: AIXTRON LP-HVPE Project 2106
General purpose: Epitaxy of InP & GaAs

Detailed description: Hot wall, low-pressure hydride vapor phase epitaxy (LP-HVPE) reactor for growth of InP and GaAs. Operation close to equilibrium allows perfect selectivitiy and very high growth rates, making it suitable for eg. semi-insulating regrowth of laser and PIC structures as well as epitaxial lateral overgrowth (ELOG) in heteroepitaxy.

Technical data:

• Carrier gases: N2/H2
• III-sources: InCl, GaCl
• V-sources: PH3, AsH3
• Dopants: S, Fe
• Growth temperature: 500 - 650 C

Capabilities:

• Epitaxial growth of InP, GaAs and InGaAs
• In-situ etching with HCl
• High growth rates (>10 um/h on planar substrates)
• Selective growth (100% selectivity)
• Planarizing regrowth of semi-insulating material
• Epitaxial Lateral Overgrowth (ELOG)

Restrictions:

• Substrate size (max.): 3''
• Substrate size (min.): no limitation
• Other substrate restrictions: no metals, no polymers
• Batch processing (Y/N): N
• Carrier substrate allowed (Y/N): N