Technical description

Full equipment name: Wet bench spray etch (GaAs) W30
General purpose: Etching of GaAs wafers with H2O2 and NH3
Technical data:
• Chemicals: Ammonia (NH4OH), Hydrogen Peroxide (H2O2)
• Spray etch bath
• Bubbler
• DI Water gun
• Manual working place/solvent drain
• Nitrogen gun

Full equipment name: Wet bench GaAs etch W31
General purpose: Etching of GaAs wafers with and HCl
Technical data:
• Chemicals: Hydrochloric Acid (HCl)
• Acid etch bath and drain for acids
• Bubbler
• DI Water gun
• Manual working place/solvent drain
• Nitrogen gun