Technical description
Full equipment name: Epsilon 2000 ASM
General purpose:
Epitaxial growth of Si, SiGe, and Ge materials
Selective and non-selective processes
In-situ doping with Boron or Phosphourus
Technical data:
• Reduce Pressure Chemical Vapour Pressure (RPCVD) System
• Gases: SiH4, Si2H6, SiCl2H2, GeH4, PH3, B2H6, HCl and H2
• Single wafer process
• Working temperature range 400-1150 °C
• Automatic cassette to cassette handling of 100 mm wafers