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Current status:
AVAILABLE
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Technical description
Full equipment name: Plasmalab 80Plus (Oxford PECVD System) Chamber A
General purpose: Deposition of dielectric thin films
Technical data:
• Standard processes for deposition of thin films such as Si3N4 and SiO2.
• Installed gases: SiH4 (2% in N2), NH3, N2O, CF4, O2, N2
• Aluminium chuck, approx. 8” diameter.
• Uniformity: +/- 2 % within batch, +/- 3% between batches.
• Chamber vacuum: > 0 mTorr under pumping
• RF frequency: 13.56 MHz, & 10-400 kHz (dual RF source)
• Plasma power range: 0 – 500 W
 

Tool name:
Pekka
Area/room:
C-Q-Etch
Category:
Thin film deposition
Manufacturer:
Plasmalab
Model:
80Plus (Oxford PECVD System) Chamber A
Tool rate:
D
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:
4

Latest calibration runs:


Silicon oxide

Recipe: OX VALFRI TJOCKLEK STD

Deposition rate: 68,9 nm/min  (2019-10-03)


Silicon nitride

Recipe: NIT VALFRI TJOCKLEK STD

Deposition rate: 16,7 nm/min  (2019-10-03)

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