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Current status:
AVAILABLE
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Technical description
Full equipment name: TePla Model 300 Plasma System
General purpose: Photoresist stripping, substrate surface cleaning
Technical data:
• Microwave generator: 2,45 GHz / 1000 W
• Installed gases: N2, O2
• Dry pump: Busch – Cobra DS80
• Process pressure range: 0,2 – 2,0 mbar
• Temperature probe: Raytek IR sensor
 

Tool name:
Tepla
Area/room:
C-Q-Etch
Category:
Dry etching
Manufacturer:
TePla
Model:
300 (Microwave Plasma Asher)
Tool rate:
B
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

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