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Technical description
Full equipment name: Oxford Instrument ICP380 Etch System
General purpose: Dry etching of GaAs and InP
Technical data:
• ICP/RF excited plasma
• Gases: SiCl4, Cl2, H2, CH4, SF6, Ar, O2, N2
• Single wafer etch-system with loadlock (maximum 200 mm wafer)
• Configured for 100mm wafers, glue smaller pieces on 100 mm Si wafers
• Achived uniformity: +/- 3 % within 100mm GaAs wafer
 

Tool name:
Gallus
Area/room:
C-Q-Etch
Category:
Dry etching
Manufacturer:
Oxford Instrument
Model:
ICP380 Etch System (GaAs & InP)
Tool rate:
E
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

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