Full equipment name: Oxford Instrument ICP380 Etch System
General purpose: Dry etching of compound semiconductors.
• ICP/RF excited plasma
• Gases: SiCl4, Cl2, H2, CH4, SF6, Ar, O2
• Single wafer etch-system with loadlock (maximum 200 mm wafer)
• Configured for 4" wafers, glue smaller pieces on 4" Si wafers
• Achieved uniformity: +/- 3 % within 100 mm GaAs wafer