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Current status:
AVAILABLE
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Technical description
Full equipment name: Plasmalab80Plus (Oxford RIE System) Chamber B
General purpose: Reactive Ion Etching
Technical data:
• Standard processes for etching of thin films such as Si3N4 and SiO2
• Installed gases: CF4, O2 and Ar (CHF3 disconnected)
• Graphite chuck, approx. 8” diameter
• Uniformity: +/- 3 % within batch, +/- 4% between batches
• Chamber vacuum: > 35 mTorr
• RF frequency: 13.56 MHz
• Plasma power range 0 – 500 W
 

Tool name:
Esa
Area/room:
C-Q-Etch
Category:
Dry etching
Manufacturer:
Oxford Plasma System
Model:
Plasmalab80Plus (Oxford RIE System) Chamber B
Tool rate:
D
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:
3

Latest calibration run:

Silicon nitride

Recipe: NITRIDE CF4 ETCH (CF4 60 sccm, O2 6 sccm, 75 mTorr, 45 W)

Etch rate: 30,3 nm/min for P5000 silicon nitride (2019-10-10)

Note: This recipe will etch silicon oxide as well, but it is only calibrated for silicon nitride.

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