Omega c2L cluster system supporting two plasma etch chambers (Rapier and Synapse). the cluster system has support for 4, 6 and 8 inch wafers. Standard configuration is 6 inch.

Rapier Process Module:

The Rapier process module is a deep silicon etcher using an inductively coupled plasma (ICP) etching system for etching deep trenches in silicon. The tool uses a fast switching (> = 0.7 seconds) Bosch process that produces sidewall profiles with small scallops with etch rates up to 15 µm per minute. Moreover, non-switched etching can be used to achieve tapered profiles. The Claritas end point detector can minimize the notching of SOI wafer etch as well as control the pre-etch and the post-etch cleaning.

Advantages:

• dual plasma source with independently controlled primary and secondary decoupled plasma zones, with independent dual gas inlets resulting in a highly concentrated and uniformed distribution of radicals.
• High etch rate
• Excellent uniformity
• Controls tilting of deep features across the wafer