Picture of IDP
Current status:
AVAILABLE
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Responsibles
1st Responsible:
Yong-Bin Wang
2nd Responsible:
Per-Erik Hellström
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Description

Technical description
1. Full equipment name
ExperTech CTR-200 Compact Thermal Reactor

2. General purpose
LPCVD undopedor doped amorphous silicon or poly silicon

3. Technical data
Gases: N2, SiH4, Si2H6, 1% PH3/H2, 4% B2H6/N2

4. Capabilities:
· LPCVD -Si (undoped amorphous poly silicon)
· LPCVD poly-Si (undoped poly silicon)
· LPCVD IDP (In situ phosphorus- or boron- doped amorphous and poly silicon)

Details
Tool name:
IDP
Area/room:
C-APL
Category:
Thin film deposition
Manufacturer:
Expertech
Model:
LPCVD furnace
Tool rate:
C
Process info

Si depositions using SiH4.

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Undoped amorphous Si, Open boat

  • Standard a-Si, undoped amorphous Si (SiH4) at T=560C
    • 2.5±0.1 nm/min, (2024-03-20)

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Doped (n-type with PH3) amorphous Si (SiH4) at T=560C, Closed caged boat

  • n+-poly Si: 1.42±0.06 nm/min (2024-04-15)
    RTA 800C, 60s gives resistivity=2.2 mOhmcm and carrier concentration = 2.2e20 cm-3

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Doped (p-type with B2H6) Si (SiH4), Open boat

  • p+-poly Si at 560C: 4.8 nm/min +/- 10% (2024-04-17)
    RTA 800C, 60s gives resistivity =2.8 mOhmcm and carrier concentration = 2.8e20 cm-3
  • p+-poly Si at 620C has a dep rate about twice othe dep rate at 560C.

Cage boat can be used for p-type poly to improve uniformity (<5%) but with lower deposition rate of 2.7 nm/min

Instructors & Licensed Users

Instructors

Licensed Users

Tool Modes
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