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LPCVD deposition of undoped and doped Si films

 

Tool name:
IDP
Area/room:
C-APL
Category:
Thin film deposition
Manufacturer:
Expertech
Model:
LPCVD furnace
Tool rate:
C
Max booking time, day:
10 hours
Max booking time, night:
hours
No. of future bookings:

Si depositions using SiH4 or Si2H6. Doped films with phosphour or boron.

Standard depositions include:

Undoped amorphous and polycrystalline Si

  • Standard a-Si, undoped amorphous Si (SiH4) at T=560C
    • 2.57±0.01 nm / min, calibrated 2019-03-07 on closed short cage boat 
  • Undoped amorphous Si (Si2H6) at T=450C, ~3.3 nm / min
  • Undoped polycrystalline Si (SiH4) at T=620C, 8.23±0.05 nm / min, calibrated 2015-09-08

Doped (n-type with phosphorus) amorphous Si (SiH4) at T=560C

  • Standard IDP: 0.512±0.004 nm / min, calibrated 2016-02-18
  •  Fast IDP
    • 1.59±0.03 nm / min, calibrated 2019-03-05 on closed cage boat

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