Picture of LPE 106
Current status:
AVAILABLE
Book | Log
Show/Collapse all

1st Responsible:
2nd Responsible:
You must be logged in to view files.

Technical description
Full equipment name: LPE PE106
General purpose: Growing epitaxial layers on SiC-wafers
Technical data:
• Hotwall SiC-CVD reaktor with loadlock
• One cell with rotation for three dimension of wafers;
    - 3” 1 wafer
    - 4” 1 wafer
    - 6” 1 wafer
Installed gases:
• House gases:
   - H2, Ar, N2
• System gases:
   - SiH4,10% i H2, 50 L
   - C3H8, 10% i H2, 50 L
   - N2, 100%, 50 L
   - HCl, 100%, 10 L
• MO-chamber: TMAl 100 g
• Thermobath: Glykol i H2O
• Process pressure range: < 1000 mbar
• RF power 60 kW

Tool name:
LPE 106
Area/room:
C-Si-epi
Category:
Epitaxy
Manufacturer:
LPE
Model:
PE106
Tool rate:
E
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

Instructors

Licensed Users

You must be logged in to view tool modes.