Oxford Instruments Plasmapro 100 ICPCVD deposition system with loadlock

Standard processes available for:

Si-O

Si-N

Si-C

aSi

Process gases: O₂, Ar, SiH₄, CH₄, H₂, TEOS, N₂

Configured for 100 to 200mm wafers

Standard deposition temperature 200 C, wide temperature range electrode -150 -> 350 with He backside pressure

Plasma power: ICP max 3000 W, table RF max 300 W

Process pressure: ~1-100 mTorr

Webmanual:

COMING SOON