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Current status:
AVAILABLE
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Technical description:

4" PVD

Chamber E degas at 300-400C
Chamber C pre-clean
Chamber 1 for TiW deposition
Chamber 3 for Ni deposition
Chamber 4 for Al deposition

Tool name:
Endura
Area/room:
C-Si-metal
Category:
Thin film deposition
Manufacturer:
Applied Materials
Model:
PVD
Tool rate:
D
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

Pre clean sputter etch of SiO2 ~ 42 nm/min

TiW Deposition Rate = 206 nm/min  Within Wafer Variability <1%

Al Deposition Rate = 851 nm/min Within Wafer Variability <2%

Ni Deposition rate = 87 nm/min Within Wafer Variability <3%

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