OXIDE ETCHING with Recipe: CH:A OXIDE TIME
Etch Rate (thermal oxide) ~ 140 nm/min Etch Rate (PECVD SIO2HDR) = 174 nm/min
SiN ETCHING with Recipe: CH:A SiN TIME
Etch Rate (LPCVD SiN) ~ 95 nm/min Etch Rate (PECVD SINLDR)= 142 nm/min
ALUMINIUM ETCHING with Recipe: CH:B Al ONLY
Etch Rate (Endura AL) ~ 600 nm/min
POLY-Si ETCHING with Recipe: CH:C STD POLY
Etch Rate ~ 270 nm/min
OXIDE DEPOSITION (PECVD T=400C)
CH:D SiO2LDR ~ 195 nm/min CH:D SiO2HDR=783 nm/min
SiN DEPOSITION (PECVD T=400C)
CH:D SINLDR= 61 nm/min