Picture of T3-Gate ox
Current status:
AVAILABLE
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Runs with process times longer than 6 hours with O2, should be discussed in advanced with the Electrum personnel.

Technical description
PCMux user name: oper, password: thermco
Full equipment name: Thermco furnace
General purpose: Thermal oxidation of silicon , Diffusion 625 - 1150 °C
Wafer sizes: 4". 6" and 200 mm
Restrictions
The furnace can be used for processing of silicon and SiC material.
Allowed substrates:
- Semiconductor grade silicon or better.
- Semiconductor grade SiC or better.
- Semiconductor grade quartz or better.
Allowed films:
- Semiconductor grade Si (silicon), SiO2 (silicon dioxide), Si3N4 (silicon nitride)
NOT ALLOWED: any metal films, organic material
Technical data:
Gases (maxflow): N2 (10 slm), O2 (10 slm), DCE
Tube heating:
3-zone furnace controlled with either spike thermocouples for fast temperature change or profile thermocouples
Thermocouple types: S-type (10 % Rh in Pt/Pt)
Tube maximum allowed temperature: 1150 °C
Tube maximum ramp up speed: 10 C/min
Tube maximum ramp down speed: 3 C/min
Tube/boat material: High purity Quartz
Cantilever paddle material: High purity siliconized SiC

 

Tool name:
T3-Gate ox
Area/room:
C-APL
Category:
Thermal processes
Manufacturer:
Thermco
Model:
5200
Tool rate:
B
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:
3
Process control
Dry oxide 1000 C, 8 min, specification  T3 Process control dry oxide instruction
 
Oxide thickness~ 18 nm  Process control record T3 dry oxide
 

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