Picture of ALD
Current status:
AVAILABLE
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Technical description
Full equipment name: BENEQ TFS 200
General purpose:
Atomic Layer Deposition of metals and dielectrics
Technical data:
Process chambers for thermal and plasma ALD
4 Liquid source positions
2 Hot source (Tmax=300C) positions
Gases:
N2, NH3, O2, O3
Liquid precursors
- Trimethylaluminum (TMA), Al2(CH3)6
- Titaniumtetrachloride (TiCl4)
- AP-LTO-330 (commercial name for Si precursor by Airproduct)
- Water (H2O)

Hot source pecursors
- Tetrakis(dimethylamino)Silane (4DMAS), Si[N(CH3)2]4
- Bis(methylcyclopentadienyl)methoxymethylhafnium (HfD04), Hf[C5H4(CH3)]2(OCH3)CH3
- Trimethyl(methylcyclopentadienyl)Platinum (PtSA03)
- Tris(cyclopentadienyl)thulium(III) (TmCp3)

 

Tool name:
ALD
Area/room:
C-Anneal
Category:
Thin film deposition
Manufacturer:
BENEQ
Model:
TFS200
Tool rate:
C
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:
4

Thickness per cycle and uniformity on 100mm wafer:

  • A_std_Al2O3:           0.1139±0.0014 nm/cycle        2.5%            updated 2017-12-14
  • SiO2 thermal ozone:    0.098±0.002 nm/cycle        5%            updated 2016-09-08
  • TiN thermal:               0.026±0.001 nm/cycle        5%             updated 2017-01-30
  • HfO2 thermal HS1:      0.054±0.002 nm/cycle        6%            updated 2016-09-08
 

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