Picture of ALD
Current status:
AVAILABLE
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Technical description
Full equipment name: BENEQ TFS 200
General purpose:
Atomic Layer Deposition of metals and dielectrics
Technical data:
Process chambers for thermal ALD
4 Liquid source positions
2 Hot source (Tmax=300C) positions
Gases:
N2, NH3, O2, O3
Liquid precursors
- Trimethylaluminum (TMA), Al2(CH3)6
- Titaniumtetrachloride (TiCl4)
- AP-LTO-330 (commercial name for Si precursor by Airproduct)
- Water (H2O)

Hot source pecursors
- Bis(methylcyclopentadienyl)methoxymethylhafnium (HfD04), Hf[C5H4(CH3)]2(OCH3)CH3
- Tris(cyclopentadienyl)thulium(III) (TmCp3)

 

Tool name:
ALD
Area/room:
C-Anneal
Category:
Thin film deposition
Manufacturer:
BENEQ
Model:
TFS200
Tool rate:
C
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:
4

Thickness per cycle and uniformity on 100mm wafer:

Recipe Rate (nm/cycle) Uniformity Updated
A_std_Al2O3 0.1±0.0007 <1% 2021-03-30
A_std_TiO2 0.06±0.0016 <2% 2021-03-30
A_std_SiO2 0.11±0.002 <2% 2021-03-30
A_std_TiN 0.0206±0.0002 <5% 2021-08-20
Tm2O3 thermal Strem 4in 0.2±0.02 5-6% 2021-03-30
HfO2 thermal HS1: 0.054±0.002 <6 2016-09-08

 

 

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