Picture of P5000 RIE/PECVD cluster
Current status:
WARNING
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Responsibles
1st Responsible:
Mattias Ekström
2nd Responsible:
Per-Erik Hellström
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Description

Technical description
Full equipment name: Applied Materials Precision 5000 Mark II
General purpose:
• Dry etching of SiN and SiO2 in chamber A
• Dry etching of Al, TiW and TiN in chamber B
• Dry etching of poly-Si, poly-SiGe,  c-Si and c-SiC in chamber C
• Deposition of dielectric (SiO2, SiN) in chamber D

Technical data and resrictions:
• One loadlock system and four processing chambers A, B, C and D
• Chamber A:
  - MarkII chamber for dielectric etching
  - gases: N2, Ar, O2, CF4 and CHF3
Generally wafers with metal are not allowed in the chamber.
  It is allowed to do contact hole etch in SiO2 or SiN and stop on Al or TiW.

• Chamber B:
  - rebuilt MxP chamber for Al, TiW and TiN etching
  - gases: BCl3, Cl2, SF6, Ar and 8%O2/CF4
For any other metals except Al, TiW, TiN please contact machine responsible.
    Au, Pt, Cu is not allowed in the chamber. These materials will cause metal residuals on the chamber walls that will distort the plasma and making all etching recipes to fail.

• Chamber C:
  - MxP chamber for Si, SiGe, Ge and SiC etching
  - gases: HBr, Cl2, HeO2, SF6 and CF4
Generally wafers with metal are not allowed in the chamber.
  It is allowed to etch poly-Si and stop on TiN.

• Chamber D:
  - Lamp heated chamber for deposition of SiO2, SiN
  - gases: SiH4, N2O, NH3, N2
The default deposition temperature is 400 °C. All materials on the wafer needs to be compatible with this temperature. For example resist is not allowed in the chamber.
 

Details
Tool name:
P5000 RIE/PECVD cluster
Area/room:
C-Si-metal
Category:
Dry etching
Manufacturer:
Applied Materials
Model:
Precision 5000 Mark II (Dielectric, MxP, CVD)
Tool rate:
D
Process info

OXIDE ETCHING with Recipe: STD A OXIDE TIME

PECVD SiO2 (HDR) = 137 nm/min, Within Wafer Variability 8.5 % (Edge fast), 2026-08-27

Old data:

Etch Rate (thermal oxide) ~ 140 nm/min
Etch Rate (PECVD SIO2HDR) = 221 nm/min  Within Wafer Variability 12 nm/min

SiN ETCHING with Recipe: STD A SIN TIME

PECVD SiNx (SF) = 124 nm/min, Within Wafer Variability 11.6 % (Edge fast), 2026-08-27

Old data:

Etch Rate (PECVD SIN SF) = 152 nm/min Within Wafer Variability 5 nm/min,

ALUMINIUM ETCHING with Recipe: CH:B Al ONLY

Etch Rate (Endura AL) = 970 nm/min Within Wafer Variability <70 nm/min

POLY-Si ETCHING with Recipe: STD C POLY TIME

Amorphous silicon (IDP STD A-SI) ~160 nm/min, Within Wafer Variability ~20 % (needs correction), 2026-08-27

Old data:

Etch Rate ~ 270 nm/min

OXIDE DEPOSITION (PECVD T=400C)

STD D SIO2 LDR = 183 nm/min Within Wafer Variability 0.3 %, 2026-08-19

STD D SIO2 HDR = 716 nm/min Within Wafer Variability 1 %, 2026-08-19

Old data:

CH:D SiO2LDR = 195 nm/min Within Wafer Variability <1%
CH:D SiO2HDR2=715 nm/min Within Wafer Variability 12 nm/min, Stress < 10 MPa Compressive

SiN DEPOSITION (PECVD T=400C)

STD D SIN SF = 66 nm/min, Within Wafer Variability 4.2 %, Stress ~90+/-310 MPa, refractive index 1.982 at 633 nm

Old data:

CH:D SIN SF= 65 nm/min Within Wafer Variability 1 nm/min, Stress < 150 MPa Tensile, Refractive index = 2.00 at 589 nm

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