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AVAILABLE
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Technical description
Full equipment name: Applied Materials Precision 5000 Mark II
General purpose:
• Dry etching of SiN and SiO2 in chamber A
• Dry etching of Al, TiW and TiN in chamber B
• Dry etching of poly-Si, poly-SiGe,  c-Si and c-SiC in chamber C
• Deposition of dielectric (SiO2, SiN) in chamber D

Technical data and resrictions:
• One loadlock system and four processing chambers A, B, C and D
Chamber A:
  - MarkII chamber for dielectric etching
  - gases: N2, Ar, O2, CF4 and CHF3
Generally wafers with metal are not allowed in the chamber.
  It is allowed to do contact hole etch in SiO2 or SiN and stop on Al or TiW.

Chamber B:
  - rebuilt MxP chamber for Al, TiW and TiN etching
  - gases: BCl3, Cl2, SF6, Ar and 8%O2/CF4
For any other metals except Al, TiW, TiN please contact machine responsible.
    Au, Pt, Cu is not allowed in the chamber. These materials will cause metal residuals on the chamber walls that will distort the plasma and making all etching recipes to fail.

Chamber C:
  - MxP chamber for Si, SiGe, Ge and SiC etching
  - gases: HBr, Cl2, HeO2, SF6 and CF4
Generally wafers with metal are not allowed in the chamber.
  It is allowed to etch poly-Si and stop on TiN.

• Chamber D:
  - Lamp heated chamber for deposition of SiO2, SiN
  - gases: SiH4, N2O, NH3, N2
The default deposition temperature is 400 °C. All materials on the wafer needs to be compatible with this temperature. For example resist is not allowed in the chamber.
 

Tool name:
P5000
Area/room:
C-Si-metal
Category:
Dry etching
Manufacturer:
Applied Materials
Model:
Precision 5000 Mark II (Dielectric, MxP, CVD)
Tool rate:
D
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

OXIDE ETCHING with Recipe: CH:A OXIDE TIME

Etch Rate (thermal oxide) ~ 140 nm/min
Etch Rate (PECVD SIO2HDR) = 181 nm/min  Within Wafer Variability <6%

SiN ETCHING with Recipe: CH:A SiN TIME

Etch Rate (LPCVD SiN) ~ 95 nm/min
Etch Rate (PECVD SIN SF) = 125 nm/min Within Wafer Variability <6%

ALUMINIUM ETCHING with Recipe: CH:B Al ONLY

Etch Rate (Endura AL) = 660 nm/min Within Wafer Variability less than <7%

POLY-Si ETCHING with Recipe: CH:C STD POLY

Etch Rate ~ 270 nm/min

OXIDE DEPOSITION (PECVD T=400C)

CH:D SiO2LDR = 195 nm/min Within Wafer Variability <1%
CH:D SiO2HDR2=728 nm/min Within Wafer Variability <2%

SiN DEPOSITION (PECVD T=400C)

CH:D SIN SF= 66 nm/min Within Wafer Variability <3%

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