Technical description
Full equipment name: STS ICP DRIE
General purpose: Deep Reactive Ion Etching of silicon, silicon carbide, and silicon oxide
Technical data:
• Reactive ion etching process
• Single wafer machine with loadlock
• Installed gases: C4F8, SF6, Ar, O2
• Process pressure range: 10-95 mTorr
• Plasma power max, coil: 1200W, platen: 350W