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Technical description
Full equipment name: STS ICP DRIE
General purpose: Deep Reactive Ion Etching of silicon, silicon carbide, and silicon oxide
Technical data:
• Reactive ion etching process
• Single wafer machine with loadlock
• Installed gases: C4F8, SF6, Ar, O2
• Process pressure range: 10-95 mTorr
• Plasma power max, coil: 1200W, platen: 350W
 

Tool name:
ICP
Area/room:
C-Si-metal
Category:
Dry etching
Manufacturer:
STS
Model:
ICP DRIE (Si, SiO2)
Tool rate:
D
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

"acr std" is the standard bosch recipe that will give you an etchrate of approx. 3-4 microns/minute when etching Silicon.

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