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Technical description
Full equipment name: AIXTRON LP-HVPE Project 2106
General purpose: Epitaxy of InP & GaAs

Detailed description: Hot wall, low-pressure hydride vapor phase epitaxy (LP-HVPE) reactor for growth of InP and GaAs. Operation close to equilibrium allows perfect selectivitiy and very high growth rates, making it suitable for eg. semi-insulating regrowth of laser and PIC structures as well as epitaxial lateral overgrowth (ELOG) in heteroepitaxy.

Technical data:

  • Carrier gases: N2/H2
  • III-sources: InCl, GaCl
  • V-sources: PH3, AsH3
  • Dopants: S, Fe
  • Growth temperature: 500 - 650 C

Capabilities:

  • Epitaxial growth of InP, GaAs and InGaAs
  • In-situ etching with HCl
  • High growth rates (>10 um/h on planar substrates)
  • Selective growth (100% selectivity)
  • Planarizing regrowth of semi-insulating material
  • Epitaxial Lateral Overgrowth (ELOG)

Restrictions:

  • Substrate size (max.): 3''
  • Substrate size (min.): no limitation
  • Other substrate restrictions: no metals, no polymers
  • Batch processing (Y/N): N
  • Carrier substrate allowed (Y/N): N

 

Tool name:
Obelix
Area/room:
C-Epi-III/V
Category:
Epitaxy
Manufacturer:
Aixtron
Model:
LP-VPE 2106
Tool rate:
E
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

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