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Technical description
Full equipment name: Epsilon 2000 ASM

General purpose:
Epitaxial growth of Si, SiGe, Ge or GeSn materials
Selective and non-selective processes
In-situ doping with Boron or Phosphourus

Technical data:
• Reduce Pressure Chemical Vapour Pressure (RPCVD) System
• Gases: SiH4, Si2H6, SiCl2H2, GeH4, Ge2H6, SnCl2, PH3, B2H6, HCl and H2
• Single wafer process
• Working temperature range 290-1150 °C
• Configured for 100 mm wafers
 

Tool name:
Epsilon2000
Area/room:
C-Si-epi
Category:
Epitaxy
Manufacturer:
ASM200
Model:
Si-epi
Tool rate:
E
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

The process to deposit Si0.70Ge0.3 grown at T=560 °C is used to monitor the reproducibility of the tool.

Recipe is Si90Ge60T560SPC and deposition time is 6 min.

The deposition rate is 15 nm/min with variation <6%
Ge concentration is 0.28 with variation < 15%
 

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