Technical description
Full equipment name: STS 308PC
General purpose: Strip resist on 100 mm wafers using O2 plasma
Technical data:
• Barrel plasma etch
• Batch chamber, can handle 100 of 100 mm wafers, 50 of 150 mm wafers
• Manual loading
• Installed process gases: O2
• Process pressure: about 1.5 Torr
• Plasma power max: 600 W
• Chamber heater
Capabilities:
• Remove resist using O2 plasma in a barrel system
Restrictions:
• Substrate size (max): 150 mm
• Substrate size (min): pieces
• Substrate restrictions: No gold contaminated wafers
• Batch processing:Yes