Technical description
Full equipment name: Plasma Enhanced Chemical Vapor Deposition (PECVD)
General purpose: Deposition of silicon oxide, silicon nitride and amorphous silicon
Producer: Surface Technology Systems, UK
Technical data:
• Parallel plate RF excited plasma, LF generator 380 kHz, 1000W or HF generator 13.56 MHz, 300W
• Gases: SiH4, N2O, N2, NH3, CF4, B2H6, GeH4, PH3, Ar, O2, He
• Single wafer deposition-system with loadlock (maximum 150 mm wafer)
• Configured for 100 mm wafers, glue smaller pieces on 100 mm Si wafers
• Achived thickness uniformity: +/- 3 % within 100 mm Si wafer
• Achived refractive index uniformity: +/- 0.0005 within 100 mm Si wafer