Technical description
Full equipment name: Epigress VP508/SK
General purpose: Growing epitaxial layers on SiC-wafers
Technical data:
• Hotwall SiC-CVD reaktor
• Two cells;
- One single wafer cell (without rotation)
- One with rotation for three dimension of wafers;
- 2” 3 wafer
- 3” 1 wafer
- 4” 1 wafer
Installed gases:
• House gases:
- H2, Ar, N2
• System gases:
- SiH4,10% i H2, 20 L
- C3H8, 10% i H2, 20 L
- N2, 100%, 10 L
- (HCl, 5% i H2, 20 L)
• MO-chamber: TMAl 100 g
• Thermobath: Glykol i H2O
• Process pressure range: < 1000 mbar
• RF power 40 kW