Picture of Semlan
Current status:
AVAILABLE
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Technical description
Full equipment name: Epigress VP508/SK
General purpose: Growing epitaxial layers on SiC-wafers
Technical data:
• Hotwall SiC-CVD reaktor
• Two cells;
  - One single wafer cell (without rotation)
  - One with rotation for three dimension of wafers;
    - 2” 3 wafer
    - 3” 1 wafer
    - 4” 1 wafer
Installed gases:
• House gases:
   - H2, Ar, N2
• System gases:
   - SiH4,10% i H2, 20 L
   - C3H8, 10% i H2, 20 L
   - N2, 100%, 10 L
   - (HCl, 5% i H2, 20 L)
• MO-chamber: TMAl 100 g
• Thermobath: Glykol i H2O
• Process pressure range: < 1000 mbar
• RF power 40 kW

Tool name:
Semlan
Area/room:
C-Epi-SiC
Category:
Epitaxy
Manufacturer:
Epigress
Model:
VP508/SK SiC-VPE
Tool rate:
E
Max booking time, day:
hours
Max booking time, night:
hours
No. of future bookings:

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