Technical description
Full equipment name: EMCORE D180 LDM MOVPE system
General purpose: Epitaxy of (In,Al,Ga)As on GaAs
Technical data:
• “Turbodisc” reactor with two heater zones, and three alkyl inlet zones
• Wafer surface temperature and growth rate via emissivity-compensated pyrometry
• Configured for 1x100mm wafer, or 3x75 mm wafers
• Gases: H2, N2, AsH3, 100 ppm Si2H6 in H2
• MO-sources: 2xTMGa, TEGa, 2xTMAl, TMIn, CBr4
• Thickness uniformity (AlGaAs): +/-0.4 % on 100 mm wafer, 5 mm exclusion